发明授权
- 专利标题: Magnetoresistive element
- 专利标题(中): 磁阻元件
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申请号: US12686168申请日: 2010-01-12
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公开(公告)号: US08036025B2公开(公告)日: 2011-10-11
- 发明人: Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
- 申请人: Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2005-305088 20051019; JP2006-172845 20060622
- 主分类号: H01L43/00
- IPC分类号: H01L43/00
摘要:
A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
公开/授权文献
- US20100118600A1 MAGNETORESISTIVE ELEMENT 公开/授权日:2010-05-13
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