公开(公告)号：US12075630B2

公开(公告)日：2024-08-27

申请号：US18045539

申请日：2022-10-11

Applicant: Everspin Technologies, Inc.

Inventor： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Thomas Andre ,  Sarin A. Deshpande

IPC: H01L29/82 ,  G11C11/16 ,  H01L43/00 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/00 ,  G11C11/161 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

Abstract: Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

公开(公告)号：US11706999B2

公开(公告)日：2023-07-18

申请号：US17369484

申请日：2021-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Min Lee ,  Shy-Jay Lin ,  Yen-Lin Huang ,  MingYuan Song ,  Tung Ying Lee

IPC: H01L43/00 ,  H01L43/04 ,  H01L43/14 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/04 ,  H01L27/228 ,  H01L43/10 ,  H01L43/14

Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

公开(公告)号：US11594357B2

公开(公告)日：2023-02-28

申请号：US16850173

申请日：2020-04-16

Applicant: University of Rochester

Inventor： Abdelrahman G. Qoutb ,  Eby G. Friedman

IPC: H01F10/32 ,  G11C11/16 ,  H03K19/18 ,  H01L43/10 ,  H01L43/00 ,  G11C11/18 ,  H01L43/06 ,  H01L43/04

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. The heavy-metal nanostrip includes at least a first layer including a heavy metal and a second layer which includes a different heavy-metal. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis, the ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of the flow of electrical charge through the heavy-metal nanostrip includes an angle ξ with respect to the short axis of the nanomagnet.

公开(公告)号：US11532323B1

公开(公告)日：2022-12-20

申请号：US17405954

申请日：2021-08-18

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Brian R. York ,  Cherngye Hwang ,  Susumu Okamura ,  Xiaoyong Liu ,  Kuok San Ho ,  Hisashi Takano

IPC: G11B5/39 ,  H01L43/00 ,  H01L27/22 ,  H01L43/04 ,  H01F10/32 ,  H01L43/10 ,  H01L43/06 ,  G11C11/16 ,  G11B5/31

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

公开(公告)号：US11482570B2

公开(公告)日：2022-10-25

申请号：US17134865

申请日：2020-12-28

Applicant: Everspin Technologies, Inc.

Inventor： Kerry Joseph Nagel ,  Sanjeev Aggarwal ,  Thomas Andre ,  Sarin A. Deshpande

IPC: H01L29/82 ,  H01L43/00 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12 ,  H01L43/02

Abstract: Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

公开(公告)号：US11069854B2

公开(公告)日：2021-07-20

申请号：US16526255

申请日：2019-07-30

Applicant: International Business Machines Corporation

Inventor： Michael Rizzolo ,  Oscar van der Straten ,  Alexander Reznicek ,  Oleg Gluschenkov

IPC: H01L43/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: A low temperature deposited (400° C. or less) dielectric passivation layer is formed on physically exposed surfaces of a material stack including a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode. A laser anneal is then performed to improve the physical and chemical properties of the low temperature deposited dielectric passivation layer, without negatively impacting the multilayered MTJ pillar.

公开(公告)号：US11009566B2

公开(公告)日：2021-05-18

申请号：US16439699

申请日：2019-06-13

Applicant: ASAHI INTECC CO., LTD.

Inventor： Yoshinobu Honkura

IPC: G01R33/02 ,  H01L43/00 ,  A61M25/01

Abstract: The invention relates to a three-dimensional magnetic field detection device (1) which comprises three soft-magnetic bodies (21, 22) and a magnetic field detection element (3, 12, 13, 14) comprising three GSR elements. For three axial directions that are orthogonal to each other at an origin point that is the center point of measurement, the invention measures, for a first axial direction, a first-axial-direction magnetic field using two elements sandwiching the origin point, measures, for a second axial direction, a second-axial-direction magnetic field through disposing one element at the position of the origin point, and measures, for a third axial direction, a third-axial-direction magnetic field through combining the two elements for the first axial direction and the three soft-magnetic bodies and forming two crank-shaped magnetic circuits having point symmetry.

公开(公告)号：US11004588B2

公开(公告)日：2021-05-11

申请号：US16710531

申请日：2019-12-11

Applicant: University of Rochester

Inventor： Mohammad Kazemi ,  Engin Ipek ,  Eby G. Friedman

IPC: H01F10/32 ,  G11C11/16 ,  H03K19/18 ,  H01L43/00 ,  G11C11/18 ,  H01L43/06 ,  H01L43/10

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle ξ with respect to the short axis of the nanomagnet.

公开(公告)号：US10910553B1

公开(公告)日：2021-02-02

申请号：US16531129

申请日：2019-08-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Chen-Yi Weng ,  Chin-Yang Hsieh ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-An Shih ,  Jing-Yin Jhang ,  I-Ming Tseng ,  Yu-Ping Wang ,  Chien-Ting Lin ,  Kun-Chen Ho ,  Yi-Syun Chou ,  Chang-Min Li ,  Yi-Wei Tseng ,  Yu-Tsung Lai ,  Jun Xie

IPC: H01L43/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

公开(公告)号：US10770649B1

公开(公告)日：2020-09-08

申请号：US16281642

申请日：2019-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Aakash Pushp

IPC: H01L43/00 ,  H01L29/82 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10

Abstract: A device comprising a first magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.) and a second magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.