发明授权
US08036869B2 System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model
有权
用于使用第一原理模拟通过模拟结果或衍生的经验模型来控制半导体制造过程的系统和方法
- 专利标题： System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical model
- 专利标题（中）： 用于使用第一原理模拟通过模拟结果或衍生的经验模型来控制半导体制造过程的系统和方法
-
申请号： US10673467申请日： 2003-09-30
-
公开(公告)号： US08036869B2公开(公告)日： 2011-10-11
- 发明人: Eric J. Strang , Andrej Mitrovic
- 申请人： Eric J. Strang , Andrej Mitrovic
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; G06F19/00 ; G06G7/48 ; H01L21/00
摘要：
A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.
公开/授权文献
信息查询
