发明授权
- 专利标题: Non-planar sputter targets having crystallographic orientations promoting uniform deposition
- 专利标题(中): 具有促进均匀沉积的晶体取向的非平面溅射靶
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申请号: US12455159申请日: 2009-05-29
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公开(公告)号: US08037727B2公开(公告)日: 2011-10-18
- 发明人: Robert S. Bailey , Melvin K. Holcomb , David B. Smathers , Timothy Wiemels
- 申请人: Robert S. Bailey , Melvin K. Holcomb , David B. Smathers , Timothy Wiemels
- 申请人地址: US OH Grove City
- 专利权人: Tosoh SMD, Inc.
- 当前专利权人: Tosoh SMD, Inc.
- 当前专利权人地址: US OH Grove City
- 代理机构: Wegman, Hessler & Vanderburg
- 主分类号: B21D22/16
- IPC分类号: B21D22/16 ; C23C14/32 ; B23K20/00
摘要:
A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.
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