Invention Grant
- Patent Title: Method and system for controlling radical distribution
- Patent Title (中): 控制激进分布的方法和系统
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Application No.: US12754662Application Date: 2010-04-06
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Publication No.: US08038834B2Publication Date: 2011-10-18
- Inventor: Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
- Applicant: Merritt Funk , David V. Horak , Eric J. Strang , Lee Chen
- Applicant Address: JP Tokyo US NY Armonk
- Assignee: Tokyo Electron Limited,International Business Machines Corporation (“IBM”)
- Current Assignee: Tokyo Electron Limited,International Business Machines Corporation (“IBM”)
- Current Assignee Address: JP Tokyo US NY Armonk
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23C16/00 ; C23C16/455 ; C23C16/50
Abstract:
A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.
Public/Granted literature
- US20100193471A1 METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION Public/Granted day:2010-08-05
Information query
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