Invention Grant
- Patent Title: Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate
- Patent Title (中): 用导体或半导体衬底获得碳纳米管层的步骤
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Application No.: US12163184Application Date: 2008-06-27
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Publication No.: US08039380B2Publication Date: 2011-10-18
- Inventor: Jean Dijon , Adeline Fournier
- Applicant: Jean Dijon , Adeline Fournier
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Nixon Peabody LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The present invention relates to a process for producing a carbon nanotube (CNT) mat on a conductive or semiconductor substrate. According to this process, a catalytic complex comprising at least one metal layer is firstly deposited on said substrate. Said metal layer then undergoes an oxidizing treatment. Finally, carbon nanotubes are grown from the metal layer thus oxidized. The present invention also relates to a process for producing a via using said CNT mat production process.
Public/Granted literature
- US20090325377A1 Procedure for Obtaining Nanotube Layers of Carbon with Conductor or Semiconductor Substrate Public/Granted day:2009-12-31
Information query
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