发明授权
- 专利标题： Photoresist etch back method for gate last process
- 专利标题（中）： 光栅蚀刻回路法最后一道工序
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申请号： US12477618申请日： 2009-06-03
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公开(公告)号： US08039381B2公开(公告)日： 2011-10-18
- 发明人: Chiung-Han Yeh , Chen-Pin Hsu , Ming-Yuan Wu , Kong-Beng Thei , Harry Chuang
- 申请人： Chiung-Han Yeh , Chen-Pin Hsu , Ming-Yuan Wu , Kong-Beng Thei , Harry Chuang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/3205
摘要：
A method is provided for fabricating a semiconductor device. The method includes providing a substrate including a dummy gate structure formed thereon, removing the dummy gate structure to form a trench, forming a first metal layer over the substrate to fill a portion of the trench, forming a protection layer in a remaining portion of the trench, removing a unprotected portion of the first metal layer, removing the protection layer from the trench, and forming a second metal layer over the substrate to fill the trench.
公开/授权文献
- US20100065926A1 PHOTORESIST ETCH BACK METHOD FOR GATE LAST PROCESS 公开/授权日：2010-03-18
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