发明授权
US08039868B2 Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
有权
静电放电（ESD）可控硅整流（SCR）结构的结构和方法
- 专利标题： Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
- 专利标题（中）： 静电放电（ESD）可控硅整流（SCR）结构的结构和方法
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申请号： US12342228申请日： 2008-12-23
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公开(公告)号： US08039868B2公开(公告)日： 2011-10-18
- 发明人: Robert J. Gauthier, Jr. , Junjun Li , Aniket Srivastava
- 申请人： Robert J. Gauthier, Jr. , Junjun Li , Aniket Srivastava
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony J. Canale
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L29/74
摘要：
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. Further, the first and the second SCRs each include at least one component commonly shared between the first and the second SCRs.
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