发明授权
- 专利标题: Wet etching solution
- 专利标题(中): 湿蚀刻溶液
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申请号: US11892076申请日: 2007-08-20
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公开(公告)号: US08043525B2公开(公告)日: 2011-10-25
- 发明人: Jung In La , Myung Kook Park , Ho Seok Yang
- 申请人: Jung In La , Myung Kook Park , Ho Seok Yang
- 申请人地址: KR Gumi-si, Gyeongsangbuk-do
- 专利权人: Cheil Industries, Inc.
- 当前专利权人: Cheil Industries, Inc.
- 当前专利权人地址: KR Gumi-si, Gyeongsangbuk-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2006-0078818 20060821
- 主分类号: C09K13/00
- IPC分类号: C09K13/00
摘要:
A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.
公开/授权文献
- US20080041823A1 Wet etching solution 公开/授权日:2008-02-21
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