公开(公告)号：US08043525B2

公开(公告)日：2011-10-25

申请号：US11892076

申请日：2007-08-20

申请人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

发明人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

IPC分类号： C09K13/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31111

摘要： A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

摘要翻译： 湿式蚀刻溶液包括以蚀刻溶液重量计约0.1％至约3％的量的氟化氢，蚀刻溶液的约10重量％至约40重量％的无机酸，无机酸为 硝酸，硫酸和/或盐酸中的一种或多种，​​表面活性剂的量为蚀刻溶液重量的约0.0001％至约5％，非离子表面活性剂包括一种或多种烷基酚乙氧基化物和/或铵 月桂基硫酸盐和水。

公开(公告)号：US20080041823A1

公开(公告)日：2008-02-21

申请号：US11892076

申请日：2007-08-20

申请人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

发明人： Jung In La ,  Myung Kook Park ,  Ho Seok Yang

IPC分类号： C09K13/08 ,  C03C15/00

CPC分类号： C03C15/00 ,  C09K13/08 ,  H01L21/31111

摘要： A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

摘要翻译： 湿式蚀刻溶液包括以蚀刻溶液重量计约0.1％至约3％的量的氟化氢，蚀刻溶液的约10重量％至约40重量％的无机酸，无机酸为 一种或多种硝酸，硫酸和/或盐酸，非离子表面活性剂，其量为蚀刻溶液重量的约0.0001％至约5％，非离子表面活性剂包括一种或多种烷基酚乙氧基化物和/或 月桂基硫酸铵和水。