Invention Grant
- Patent Title: Method of encapsulating a wafer level microdevice
- Patent Title (中): 封装晶圆级微器件的方法
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Application No.: US12793295Application Date: 2010-06-03
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Publication No.: US08043891B2Publication Date: 2011-10-25
- Inventor: Herb He Huang
- Applicant: Herb He Huang
- Applicant Address: CN Shanghai
- Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
- Current Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: J.C. Patents
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/50 ; H01L21/48 ; H01L21/44

Abstract:
The present invention discloses a method of encapsulating a wafer level microdevice, which includes: fabricating a microdevice on top side of a first silicon wafer; depositing a first capping carbon film on the top side of the first silicon wafer; implementing a backside fabricating process of wafer from bottom side of the first silicon wafer by carrying the top side of the first silicon wafer through the first capping carbon film; removing the first capping carbon film by selective gaseous reaction with carbon; and encapsulating an encapsulation wafer onto the top side of the first silicon wafer. The present invention deposits and removes the first capping carbon film by means of chemical technology, thereby protecting the microdevice on the top side of the first wafer during implementing the backside fabricating process of wafer. The top side does not need to be protected through the encapsulation wafer before implementing the backside fabricating process of wafer, which makes the wafer thinner and convenient to be handled.
Public/Granted literature
- US20100311209A1 METHOD O ENCAPSULATING A WAFER LEVEL MICRODEVICE Public/Granted day:2010-12-09
Information query
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