发明授权
US08043907B2 Atomic layer deposition processes for non-volatile memory devices
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用于非易失性存储器件的原子层沉积工艺
- 专利标题： Atomic layer deposition processes for non-volatile memory devices
- 专利标题（中）： 用于非易失性存储器件的原子层沉积工艺
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申请号： US12687732申请日： 2010-01-14
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公开(公告)号： US08043907B2公开(公告)日： 2011-10-25
- 发明人: Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
- 申请人： Yi Ma , Shreyas S. Kher , Khaled Ahmed , Tejal Goyani , Maitreyee Mahajani , Jallepally Ravi , Yi-Chiau Huang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, L.L.P.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer on the first polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a silicon nitride layer on the first silicon oxynitride layer, depositing a second silicon oxynitride layer on the silicon nitride layer, and depositing a second polysilicon layer on the second silicon oxynitride layer. In some examples, the first polysilicon layer is a floating gate and the second polysilicon layer is a control gate.
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