发明授权
US08043934B2 Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions
有权
使用和形成在集电极和/或发射极区域下具有反掺杂注入区的横向双极晶体管的方法
- 专利标题： Methods of use and formation of a lateral bipolar transistor with counter-doped implant regions under collector and/or emitter regions
- 专利标题（中）： 使用和形成在集电极和/或发射极区域下具有反掺杂注入区的横向双极晶体管的方法
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申请号： US12912437申请日： 2010-10-26
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公开(公告)号： US08043934B2公开(公告)日： 2011-10-25
- 发明人: Jens Schneider , Martin Wendel
- 申请人： Jens Schneider , Martin Wendel
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.
公开/授权文献
- US20110038085A1 Lateral Bipolar Transistor with Additional ESD Implant 公开/授权日：2011-02-17
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