Invention Grant
- Patent Title: Dielectric structure in nonvolatile memory device and method for fabricating the same
- Patent Title (中): 非易失性存储器件中的介质结构及其制造方法
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Application No.: US12748967Application Date: 2010-03-29
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Publication No.: US08049268B2Publication Date: 2011-11-01
- Inventor: Kwon Hong , Kwan-Yong Lim
- Applicant: Kwon Hong , Kwan-Yong Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0056952 20050629
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.
Public/Granted literature
- US20100181611A1 DIELECTRIC STRUCTURE IN NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-07-22
Information query
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