A semiconductor device is provided configured to be electrically connected to another device by through silicon interconnect technology. The semiconductor device includes a semiconductor substrate with at least one through hole. A through silicon conductor extends inside the through hole from the upper side to the bottom side of the semiconductor substrate. The through silicon conductor is electrical isolated from the semiconductor substrate and includes a conductor bump at one of its ends. Between the inner surface of the through hole and the through silicon conductor a gap is formed. The gap surrounds the through silicon conductor on one side of the semiconductor substrate having the conductor bump, and extends from this side of the substrate into the substrate. The gap is filled with a flexible dielectric material.