发明授权
US08049334B1 Buried silicide local interconnect with sidewall spacers and method for making the same
有权
埋入硅化物与侧壁间隔物的局部互连及其制造方法
- 专利标题： Buried silicide local interconnect with sidewall spacers and method for making the same
- 专利标题（中）： 埋入硅化物与侧壁间隔物的局部互连及其制造方法
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申请号： US12843131申请日： 2010-07-26
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公开(公告)号： US08049334B1公开(公告)日： 2011-11-01
- 发明人: Arvind Halliyal , Zoran Krivokapic , Matthew S. Buynoski , Nicholas H. Tripsas , Minh Van Ngo , Mark T. Ramsbey , Jeffrey A. Shields , Jusuke Ogura
- 申请人： Arvind Halliyal , Zoran Krivokapic , Matthew S. Buynoski , Nicholas H. Tripsas , Minh Van Ngo , Mark T. Ramsbey , Jeffrey A. Shields , Jusuke Ogura
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Volpe and Koenig, P.C.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.