发明授权
US08049335B2 System and method for plasma induced modification and improvement of critical dimension uniformity
有权
用于等离子体诱导修饰和改善临界尺寸均匀性的系统和方法
- 专利标题： System and method for plasma induced modification and improvement of critical dimension uniformity
- 专利标题（中）： 用于等离子体诱导修饰和改善临界尺寸均匀性的系统和方法
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申请号： US11676674申请日： 2007-02-20
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公开(公告)号： US08049335B2公开(公告)日： 2011-11-01
- 发明人: Timothy J. Dalton , Ronald A. Della Guardia , Nicholas C. Fuller
- 申请人： Timothy J. Dalton , Ronald A. Della Guardia , Nicholas C. Fuller
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.
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