发明授权
US08053307B2 Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode
有权
制造具有电池外延层的半导体器件的方法部分地覆盖埋电池栅电极
- 专利标题: Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode
- 专利标题(中): 制造具有电池外延层的半导体器件的方法部分地覆盖埋电池栅电极
-
申请号: US12662393申请日: 2010-04-14
-
公开(公告)号: US08053307B2公开(公告)日: 2011-11-08
- 发明人: Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
- 申请人: Hyeoung-Won Seo , Jae-Man Yoon , Kang-Yoon Lee , Bong-Soo Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0052137 20060609
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.
公开/授权文献
- US20100267210A1 Semiconductor device and method of fabricating the same 公开/授权日:2010-10-21