发明授权
- 专利标题: Infrared sensor and method of fabricating the same
- 专利标题(中): 红外线传感器及其制造方法
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申请号: US12511251申请日: 2009-07-29
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公开(公告)号: US08053730B2公开(公告)日: 2011-11-08
- 发明人: Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auk Choi
- 申请人: Seong Mok Cho , Ho Jun Ryu , Woo Seok Yang , Sang Hoon Cheon , Byoung Gon Yu , Chang Auk Choi
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2008-0131658 20081222
- 主分类号: G01J5/02
- IPC分类号: G01J5/02
摘要:
An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.
公开/授权文献
- US20100155601A1 INFRARED SENSOR AND METHOD OF FABRICATING THE SAME 公开/授权日:2010-06-24
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