发明授权
- 专利标题： Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
- 专利标题（中）： 含磷的掺杂剂以及使用含磷掺杂剂在半导体衬底中形成磷掺杂区域的方法
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申请号： US12194688申请日： 2008-08-20
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公开(公告)号： US08053867B2公开(公告)日： 2011-11-08
- 发明人: Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- 申请人： Hong Min Huang , Carol Gao , Zhe Ding , Albert Peng , Ya Qun Liu
- 申请人地址： US NJ Morristown
- 专利权人： Honeywell International Inc.
- 当前专利权人： Honeywell International Inc.
- 当前专利权人地址： US NJ Morristown
- 代理机构： Ingrassia Fisher & Lorenz, PC
- 主分类号： H01L29/02
- IPC分类号： H01L29/02 ; H01L29/207
摘要：
Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.
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