Invention Grant
- Patent Title: Built-in self-repairable memory
- Patent Title (中): 内置可自行修复的内存
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Application No.: US11474121Application Date: 2006-06-23
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Publication No.: US08055956B2Publication Date: 2011-11-08
- Inventor: Prashant Dubey , Amit Kashyap
- Applicant: Prashant Dubey , Amit Kashyap
- Applicant Address: IN Uttar Pradesh
- Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee: STMicroelectronics Pvt. Ltd.
- Current Assignee Address: IN Uttar Pradesh
- Priority: IN1637/DEL/2005 20050623
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
The present invention provides a built-in self-repairable memory. The invention repairs a faulty IC through hard fuses, as well as through available redundancy in memories on chip. As the faults are not present in all the memories, the invention uses a lesser number of fuses to actually make a repair and thus results in a yield enhancement. The fuse data is stored in a compressed form and then decompressed as a restore happens at the power on. The fuse data interface with the memory to be repaired is serial. The serial links decreases the routing congestion and hence gain in area as well as gain in yield (due to lesser defects and reduced area).
Public/Granted literature
- US20070061653A1 Built-in self-repairable memory Public/Granted day:2007-03-15
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