发明授权
US08057925B2 Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
有权
用于STT-RAM的低开关电流双自旋滤波器（DSF）元件及其制造方法
- 专利标题： Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
- 专利标题（中）： 用于STT-RAM的低开关电流双自旋滤波器（DSF）元件及其制造方法
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申请号： US12079445申请日： 2008-03-27
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公开(公告)号： US08057925B2公开(公告)日： 2011-11-15
- 发明人: Cheng T. Horng , Ru-Ying Tong
- 申请人： Cheng T. Horng , Ru-Ying Tong
- 申请人地址： US CA Milpitas
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.
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