Surface micromachining process of MEMS ink jet drop ejectors on glass substrates

Invention Grant

US08058182B2 Surface micromachining process of MEMS ink jet drop ejectors on glass substrates 有权

Title translation: MEMS喷墨滴管在玻璃基板上的表面微加工工艺

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Patent Title: Surface micromachining process of MEMS ink jet drop ejectors on glass substrates
Patent Title (中): MEMS喷墨滴管在玻璃基板上的表面微加工工艺
Application No.: US12495827

Application Date: 2009-07-01
Publication No.: US08058182B2

Publication Date: 2011-11-15
Inventor: Chingwen Yeh , James B. Boyce , Jingkuang Chen , Feixia Pan , Joel A. Kubby
Applicant: Chingwen Yeh , James B. Boyce , Kathleen Boyce, legal representative , Jingkuang Chen , Feixia Pan , Joel A. Kubby
Applicant Address: US CT Norwalk
Assignee: Xerox Corporation
Current Assignee: Xerox Corporation
Current Assignee Address: US CT Norwalk
Agency: Fay Sharpe LLP
Main IPC: H01L21/469
IPC: H01L21/469

Surface micromachining process of MEMS ink jet drop ejectors on glass substrates

Abstract:

Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.

Abstract(Chinese):

用于形成膜的方法和装置包括提供玻璃基板，以及在玻璃基板上沉积薄层的铬。图案化薄层的铬以形成偏转电极和互连引线。在图案化的铬层的顶部上沉积铝的牺牲层，然后将牺牲层图案化以限定锚定区域。在牺牲层的顶部，沉积厚厚的铬层，并且将厚的铬层图案化以形成膜。然后蚀刻牺牲层以释放膜。

Public/Granted literature

US20110003405A1 Surface Micromachining Process of MEMS Ink Jet Drop Ejectors On Glass Substrates Public/Granted day:2011-01-06

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理