发明授权
US08058711B2 Filler for filling a gap and method for manufacturing semiconductor capacitor using the same
有权
用于填充间隙的填料和使用其制造半导体电容器的方法
- 专利标题： Filler for filling a gap and method for manufacturing semiconductor capacitor using the same
- 专利标题（中）： 用于填充间隙的填料和使用其制造半导体电容器的方法
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申请号： US12956549申请日： 2010-11-30
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公开(公告)号： US08058711B2公开(公告)日： 2011-11-15
- 发明人: Sang-Hak Lim , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
- 申请人： Sang-Hak Lim , Hui-Chan Yun , Dong-Il Han , Taek-Soo Kwak , Jin-Hee Bae , Jung-Kang Oh , Sang-Kyun Kim , Jong-Seob Kim
- 申请人地址： KR Gumi-si, Gyeongsangbuk-do
- 专利权人： Cheil Industries, Inc.
- 当前专利权人： Cheil Industries, Inc.
- 当前专利权人地址： KR Gumi-si, Gyeongsangbuk-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2009-0118751 20091202
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/469 ; H01L21/20 ; G11B5/706
摘要：
A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.
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