Invention Grant
- Patent Title: Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon
- Patent Title (中): 特别是从硅制造板状结构的方法，使用所述方法和由此制得的板状结构，特别是硅
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Application No.: US10574120Application Date: 2004-09-23
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Publication No.: US08062564B2Publication Date: 2011-11-22
- Inventor: Michel Bruel
- Applicant: Michel Bruel
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0311450 20030930
- International Application: PCT/FR2004/002398 WO 20040923
- International Announcement: WO2005/034218 WO 20050414
- Main IPC: B29C44/34
- IPC: B29C44/34 ; B29C65/00 ; H01L21/30 ; B32B37/00 ; H01L21/46
Abstract:
Method for fabricating a structure in the form of a plate, and structure in the form of a plate, in particular formed from silicon, including at least one substrate, a superstrate and at least one intermediate layer interposed between the substrate and the superstrate, in which the intermediate layer comprises at least one base material having distributed therein atoms or molecules termed extrinsic atoms or molecules which differ from the atoms or molecules of the base material, and in which a heat treatment is applied to said plate so that, in the temperature range of said heat treatment, the intermediate layer is plastically deformable and the presence of the selected extrinsic atoms or molecules in the selected base material causes the irreversible formation of micro-bubbles or micro-cavities in the intermediate layer.
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