发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12212754申请日： 2008-09-18
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公开(公告)号： US08063462B2公开(公告)日： 2011-11-22
- 发明人: Kazumasa Tanida , Masahiro Sekiguchi , Susumu Harada
- 申请人： Kazumasa Tanida , Masahiro Sekiguchi , Susumu Harada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Turocy & Watson, LLP
- 优先权： JPP2007-243663 20070920
- 主分类号： H01L31/02
- IPC分类号： H01L31/02
摘要：
A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.
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