Invention Grant
US08064249B2 Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device 有权
纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件

Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
Abstract:
A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.
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