Invention Grant
- Patent Title: Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
- Patent Title (中): 纳米线机电开关器件及其制造方法和使用纳米线机电开关器件的机电存储器件
-
Application No.: US11889515Application Date: 2007-08-14
-
Publication No.: US08064249B2Publication Date: 2011-11-22
- Inventor: Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
- Applicant: Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2006-0087426 20060911
- Main IPC: G11C11/50
- IPC: G11C11/50

Abstract:
A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.
Public/Granted literature
Information query