发明授权
- 专利标题: Semiconductor memory device having faulty cells
- 专利标题(中): 具有故障单元的半导体存储器件
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申请号: US12615502申请日: 2009-11-10
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公开(公告)号: US08064257B2公开(公告)日: 2011-11-22
- 发明人: Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- 申请人: Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- 申请人地址: US TX Marshall
- 专利权人: Solid State Storage Solutions, Inc.
- 当前专利权人: Solid State Storage Solutions, Inc.
- 当前专利权人地址: US TX Marshall
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP08-042451 19960229
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.
公开/授权文献
- US20100177579A1 SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS 公开/授权日:2010-07-15
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