发明授权
US08064324B2 Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same
失效
电场效应读/写头，其制造方法以及具有该电磁场效应的写字头效果存储装置
- 专利标题： Electric field effect read/write head, method of manufacturing the same, and electric field effect storage apparatus having the same
- 专利标题（中）： 电场效应读/写头，其制造方法以及具有该电磁场效应的写字头效果存储装置
-
申请号： US12126427申请日： 2008-05-23
-
公开(公告)号： US08064324B2公开(公告)日： 2011-11-22
- 发明人: Hyoung-soo Ko , Seung-bum Hong , Chul-min Park , Dae-young Jeon
- 申请人： Hyoung-soo Ko , Seung-bum Hong , Chul-min Park , Dae-young Jeon
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2007-0122734 20071129
- 主分类号： G11B9/00
- IPC分类号： G11B9/00
摘要：
An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.
公开/授权文献
信息查询
IPC分类:
