发明授权
- 专利标题: Thin film transistor with two gate electrodes
- 专利标题(中): 具有两个栅电极的薄膜晶体管
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申请号: US12581918申请日: 2009-10-20
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公开(公告)号: US08067775B2公开(公告)日: 2011-11-29
- 发明人: Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
- 申请人: Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-274540 20081024
- 主分类号: H01L27/14
- IPC分类号: H01L27/14
摘要:
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.