发明授权
- 专利标题： Techniques for placement of active and passive devices within a chip
- 专利标题（中）： 有源和无源器件放置在芯片内的技术
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申请号： US12364844申请日： 2009-02-03
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公开(公告)号： US08067816B2公开(公告)日： 2011-11-29
- 发明人: Jonghae Kim , Shiqun Gu , Brian Matthew Henderson , Thomas R. Toms , Matthew Nowak
- 申请人： Jonghae Kim , Shiqun Gu , Brian Matthew Henderson , Thomas R. Toms , Matthew Nowak
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Michelle Gallardo; Sam Talpalatsky; Jonathan T. Velasco
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A semiconductor die includes a semiconductive substrate layer with first and second sides, a metal layer adjacent the second side of the semiconductive substrate layer, one or more active devices in an active layer on the first side of the semiconductive substrate layer; and a passive device in the metal layer in electrical communication with the active layer. The passive device can electrically couple to the active layer with through silicon vias (TSVs).