Invention Grant
US08068529B2 Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array
有权
表面发射激光器制造方法,表面发射激光器阵列制造方法,表面发射激光器,表面发射激光器阵列和包括表面发射激光器阵列的光学装置
- Patent Title: Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array
- Patent Title (中): 表面发射激光器制造方法,表面发射激光器阵列制造方法,表面发射激光器,表面发射激光器阵列和包括表面发射激光器阵列的光学装置
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Application No.: US12958987Application Date: 2010-12-02
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Publication No.: US08068529B2Publication Date: 2011-11-29
- Inventor: Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
- Applicant: Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-198951 20080731
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.
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