公开(公告)号：US09929538B2

公开(公告)日：2018-03-27

申请号：US13608061

申请日：2012-09-10

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/183 ,  B41J2/47 ,  B82Y20/00 ,  H01S5/343

CPC classification number: H01S5/18386 ,  B41J2/471 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18391 ,  H01S5/34326 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

Abstract: A first stepped structure configured to apply a reflectance difference and a second stepped structure configured to change a far field light intensity distribution are provided. A region in which a level difference of the first stepped structure is formed has a predetermined relationship with a region in which a level difference of the second stepped structure is formed.

公开(公告)号：US20130076849A1

公开(公告)日：2013-03-28

申请号：US13608061

申请日：2012-09-10

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: B41J2/385 ,  H01S5/00

CPC classification number: H01S5/18386 ,  B41J2/471 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18391 ,  H01S5/34326 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

Abstract: A first stepped structure configured to apply a reflectance difference and a second stepped structure configured to change a far field light intensity distribution are provided. A region in which a level difference of the first stepped structure is formed has a predetermined relationship with a region in which a level difference of the second stepped structure is formed.

Abstract translation: 提供了构造成施加反射率差的第一阶梯结构和被配置为改变远场光强度分布的第二阶梯结构。 其中形成有第一阶梯结构的电平差的区域与形成第二阶梯结构的电平差的区域具有预定的关系。

公开(公告)号：US08073032B2

公开(公告)日：2011-12-06

申请号：US12979472

申请日：2010-12-28

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/00

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/2086 ,  H01S5/209 ,  H01S2301/166

Abstract: Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of the upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current confining structure, in which a depth of the second etching region is smaller than a depth of the first etching region.

Abstract translation: 提供了能够抑制表面浮雕结构和电流限制结构之间的水平偏移的表面发射激光器等，以提高对准的精度，从而稳定地获得单横模特性。 层叠有半导体层的表面发射激光器包括：通过蚀刻上反射镜的一部分而形成的第一蚀刻区域; 以及通过从第一蚀刻区域的底部进行蚀刻而形成的第二蚀刻区域到形成电流限制结构的半导体层，其中第二蚀刻区域的深度小于第一蚀刻区域的深度。

公开(公告)号：US20110182318A1

公开(公告)日：2011-07-28

申请号：US13121677

申请日：2010-09-07

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/183

CPC classification number: H01S5/18327 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18394 ,  H01S5/2086 ,  H01S5/423 ,  H01S2301/166

Abstract: A surface-emitting laser includes a surface relief structure provided on an upper multilayer reflector, the surface relief structure including a region of a first laminate, a region of a second laminate that has a larger optical thickness than the first laminate, and a region of a third laminate that has a larger optical thickness than the first laminate and the second laminate.

Abstract translation: 表面发射激光器包括设置在上多层反射器上的表面浮雕结构，表面浮雕结构包括第一层压体的区域，具有比第一层压板更大的光学厚度的第二层压体的区域，以及 具有比第一层压体和第二层压体更大的光学厚度的第三层压体。

公开(公告)号：US20110090929A1

公开(公告)日：2011-04-21

申请号：US12979472

申请日：2010-12-28

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/20

CPC classification number: H01S5/18391 ,  H01S5/18311 ,  H01S5/2086 ,  H01S5/209 ,  H01S2301/166

Abstract: Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of the upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current confining structure, in which a depth of the second etching region is smaller than a depth of the first etching region.

Abstract translation: 提供了能够抑制表面浮雕结构和电流限制结构之间的水平偏移的表面发射激光器等，以提高对准的精度，从而稳定地获得单横模特性。 层叠有半导体层的表面发射激光器包括：通过蚀刻上反射镜的一部分而形成的第一蚀刻区域; 以及通过从第一蚀刻区域的底部进行蚀刻而形成的第二蚀刻区域到形成电流限制结构的半导体层，其中第二蚀刻区域的深度小于第一蚀刻区域的深度。

公开(公告)号：US20110027924A1

公开(公告)日：2011-02-03

申请号：US12837272

申请日：2010-07-15

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01L21/00 ,  H01S5/00 ,  B41J2/435

CPC classification number: H01S5/18333 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18347 ,  H01S2301/166

Abstract: A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer.

Abstract translation: 表面发射激光器包括设置在基板上的下多层反射镜和上多层反射镜。 第一可氧化层被部分氧化以形成包括第一导电区域和第一绝缘区域的第一电流限制层。 第二可氧化层被部分氧化以形成包括第二导电区域和第二绝缘区域的第二电流限制层，第一导电区域和第一绝缘区域之间的边界被布置在第二电流限制层内部的平面内 基板的方向。 调节与各可氧化层相邻的第一可氧化层和第二可氧化层，使得当在相同的氧化条件下两层被氧化时，第一可氧化层的氧化速率低于第二可氧化层的氧化速率。

公开(公告)号：US07879632B2

公开(公告)日：2011-02-01

申请号：US12166378

申请日：2008-07-02

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01L21/00

CPC classification number: H01S5/18372 ,  B82Y20/00 ,  G02B2006/1213 ,  H01S5/105 ,  H01S5/18358 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/34326 ,  H01S2301/166

Abstract: Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer.

Abstract translation: 提供一种能够高精度，容易地形成半导体内的光子晶体结构的表面发射激光的制造方法，而无需直接接合。 这是通过在衬底上层叠多个半导体层的方法，所述多个半导体层包括有源层和在其中形成的光子晶体结构的半导体层，该方法包括以下步骤：在第一半导体层上形成第二半导体层以形成光子 晶体结构，在第二半导体层中形成多个微孔，经由多个微孔在第一半导体层的一部分中形成低折射率部分，从而为第一半导体层提供具有一维的光子晶体结构 或平行于基板的方向上的二维折射率分布，以及从第二半导体层的表面通过晶体再生长形成第三半导体层。

公开(公告)号：US07807485B2

公开(公告)日：2010-10-05

申请号：US12509551

申请日：2009-07-27

Applicant: Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

Inventor： Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

IPC: H01L21/00 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/209 ,  H01S5/34326 ,  H01S2301/166

Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

Abstract translation: 提供一种制造表面发射激光器的方法，该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构，包括以下步骤：向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此，表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

公开(公告)号：US20100220763A1

公开(公告)日：2010-09-02

申请号：US12599991

申请日：2009-02-24

Applicant: Mitsuhiro Ikuta

Inventor： Mitsuhiro Ikuta

IPC: H01S5/18

CPC classification number: H01S5/42 ,  B82Y20/00 ,  H01S5/041 ,  H01S5/105 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2081 ,  H01S5/34326 ,  H01S5/34333 ,  H01S2301/176

Abstract: Provided is a surface emitting laser array using a photonic crystal, which allows an active layer to be shared without disconnecting the active layer between the individual surface emitting lasers adjacent to each other, and enables high-density arraying easily. The surface emitting laser array includes: at least two surface emitting lasers formed on a substrate, each having a laminated structure of multiple semiconductor layers including a semiconductor multilayer mirror, an active layer, and a photonic crystal having a refractive index profile in an in-plane direction, the photonic crystal and the semiconductor multilayer mirror in the laminated structure forming a waveguide for guiding light in a resonance mode; and a region without the photonic crystal provided between adjacent surface emitting lasers in the surface emitting laser array, in which the surface emitting lasers have the same semiconductor multilayer mirror and the same active layer.

Abstract translation: 提供了使用光子晶体的表面发射激光器阵列，其允许共享活性层而不断开彼此相邻的各个表面发射激光器之间的有源层，并且能够容易地进行高密度排列。 表面发射激光器阵列包括：形成在衬底上的至少两个表面发射激光器，每个具有包括半导体多层反射镜，有源层和具有折射率分布的光子晶体的多个半导体层的层叠结构， 平面方向，层叠结构中的光子晶体和半导体多层反射镜，形成用于引导谐振模式的光的波导; 以及在表面发射激光器阵列中的相邻表面发射激光器之间提供没有光子晶体的区域，其中表面发射激光器具有相同的半导体多层反射镜和相同的有源层。

公开(公告)号：US07697588B2

公开(公告)日：2010-04-13

申请号：US11933642

申请日：2007-11-01

Applicant: Yuichiro Hori ,  Mitsuhiro Ikuta

Inventor： Yuichiro Hori ,  Mitsuhiro Ikuta

IPC: H01S3/08

CPC classification number: H01S5/18386 ,  B82Y20/00 ,  G02B6/1225 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/34326 ,  H01S5/3436

Abstract: To provide a structure having a photonic crystal that can display a reflection function using GR even when a refractive index difference between a photonic crystal layer and a cladding layer adjacent thereto is not sufficient and a surface-emitting laser using the structure. The structure includes a photonic crystal layer including a first member of a flat shape and plural pillars arrayed two-dimensionally periodically on the first member. The photonic crystal layer is formed of a first material having a first refractive index. A low refractive index layer formed of a second material having a second refractive index lower than the first refractive index is adjacent to the photonic crystal layer. A relative refractive index difference between the first refractive index and the second refractive index is not less than 0.04 and does not exceed 0.13. The height of the pillars with respect to the thickness of the photonic crystal layer is not less than 0.10t and does not exceed 0.07t.

Abstract translation: 即使在光子晶体层与与其相邻的包层之间的折射率差不足的情况下，也可以提供具有能够使用GR显示反射功能的光子晶体的结构，以及使用该结构的表面发射激光。 该结构包括光子晶体层，其包括平坦形状的第一构件和在第一构件上二维排列的多个柱。 光子晶体层由具有第一折射率的第一材料形成。 由具有低于第一折射率的第二折射率的第二材料形成的低折射率层与光子晶体层相邻。 第一折射率和第二折射率之间的相对折射率差不小于0.04并且不超过0.13。 相对于光子晶体层的厚度，柱的高度不小于0.10t，不超过0.07t。