发明授权
- 专利标题: Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
- 专利标题(中): 使用将过程参数与色散相关联的色散函数生成模拟衍射信号
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申请号: US11858058申请日: 2007-09-19
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公开(公告)号: US08069020B2公开(公告)日: 2011-11-29
- 发明人: Shifang Li , Hanyou Chu
- 申请人: Shifang Li , Hanyou Chu
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理商 Manuel Madriaga
- 主分类号: G06G7/48
- IPC分类号: G06G7/48
摘要:
A first wafer is fabricated using a first value for a process parameter specifying a process condition in fabricating the structure. A first value of a dispersion is measured from the first wafer. A second wafer is fabricated using a second value for the process parameter. A second value of the dispersion is measured from the second wafer. A third wafer is fabricated using a third value for the process parameter. The first, second, and third values for the process parameter are different from each other. A third value of the dispersion is measured from the third wafer. A dispersion function is defined to relate the process parameter to the dispersion using the first, second, and third values for the process parameter and the measured first, second, and third values of the dispersion. The simulated diffraction signal is generated using the defined dispersion function. The simulated diffraction signal is stored.
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