发明授权
- 专利标题： Process for improving the emission of electron field emitters
- 专利标题（中）： 改善电子场发射体发射的方法
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申请号： US12174114申请日： 2008-07-16
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公开(公告)号： US08070906B2公开(公告)日： 2011-12-06
- 发明人: Robert Joseph Bouchard , Lap-Tak Andrew Cheng , David Herbert Roach , John Gerard Lavin
- 申请人： Robert Joseph Bouchard , Lap-Tak Andrew Cheng , David Herbert Roach , John Gerard Lavin
- 申请人地址： US DE Wilmington
- 专利权人： E. I. du Pont de Nemours and Company
- 当前专利权人： E. I. du Pont de Nemours and Company
- 当前专利权人地址： US DE Wilmington
- 主分类号： B29C65/02
- IPC分类号： B29C65/02 ; B29C65/52 ; B32B37/14 ; B32B38/10 ; B29C65/14 ; B32B37/16
摘要：
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
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