Invention Grant
- Patent Title: Process for improving the emission of electron field emitters
- Patent Title (中): 改善电子场发射体发射的方法
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Application No.: US12174114Application Date: 2008-07-16
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Publication No.: US08070906B2Publication Date: 2011-12-06
- Inventor: Robert Joseph Bouchard , Lap-Tak Andrew Cheng , David Herbert Roach , John Gerard Lavin
- Applicant: Robert Joseph Bouchard , Lap-Tak Andrew Cheng , David Herbert Roach , John Gerard Lavin
- Applicant Address: US DE Wilmington
- Assignee: E. I. du Pont de Nemours and Company
- Current Assignee: E. I. du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: B29C65/02
- IPC: B29C65/02 ; B29C65/52 ; B32B37/14 ; B32B38/10 ; B29C65/14 ; B32B37/16
Abstract:
This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
Public/Granted literature
- US20080299864A1 PROCESS FOR IMPROVING THE EMISSION OF ELECTRON FIELD EMITTERS Public/Granted day:2008-12-04
Information query
