发明授权
- 专利标题： Micrometric direct-write methods for patterning conductive material and applications to flat panel display repair
- 专利标题（中）： 用于图案化导电材料的微米直写方法和应用于平板显示器维修
-
申请号： US11065694申请日： 2005-02-25
-
公开(公告)号： US08071168B2公开(公告)日： 2011-12-06
- 发明人: Sylvain Cruchon-Dupeyrat , Hua Zhang , Robert Elghanian , Linette Demers , Nabil Amro , Sandeep Disawal , John Bussan
- 申请人： Sylvain Cruchon-Dupeyrat , Hua Zhang , Robert Elghanian , Linette Demers , Nabil Amro , Sandeep Disawal , John Bussan
- 申请人地址： US IL Skokie
- 专利权人： Nanoink, Inc.
- 当前专利权人： Nanoink, Inc.
- 当前专利权人地址： US IL Skokie
- 代理机构： Foley & Lardner LLP
- 主分类号： B05D5/00
- IPC分类号： B05D5/00
摘要：
A new, low temperature method for directly writing conductive metal traces with micron and sub-micron sized features. In this method, a flat beam is used, such as an AFM cantilever, with or without a tip, to draw traces of metal precursor ink onto a substrate. The dimensions of the metal traces can be directly controlled by the geometry of the cantilever, so that one can controllably deposit traces from 1 micron to over 100 microns wide with microfabricated cantilevers. Cantilevers with sharp tips can be used to further shrink the minimum features sizes to sub-micron scale. The height of the features can be increased by building layers of similar or different material.
公开/授权文献
信息查询
