发明授权
- 专利标题： Method of ONO integration into MOS flow
- 专利标题（中）： ONO集成到MOS流中的方法
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申请号： US12608886申请日： 2009-10-29
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公开(公告)号： US08071453B1公开(公告)日： 2011-12-06
- 发明人: Krishnaswamy Ramkumar , Bo Jin , Fredrick B. Jenne
- 申请人： Krishnaswamy Ramkumar , Bo Jin , Fredrick B. Jenne
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device.
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