Invention Grant
- Patent Title: Trench substrate
- Patent Title (中): 沟槽衬底
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Application No.: US12463945Application Date: 2009-05-11
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Publication No.: US08072052B2Publication Date: 2011-12-06
- Inventor: Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- Applicant: Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Blakely, Sokoloff, Taylor & Zafman, LLP
- Priority: KR10-2009-0033216 20090416
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.
Public/Granted literature
- US20100264549A1 Trench Substrate and Method Of Manufacturing The Same Public/Granted day:2010-10-21
Information query
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