Invention Grant
- Patent Title: Semiconductor device including conductive element
- Patent Title (中): 包括导电元件的半导体器件
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Application No.: US12389103Application Date: 2009-02-19
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Publication No.: US08072071B2Publication Date: 2011-12-06
- Inventor: Rainer Steiner , Jens Pohl , Werner Robl , Markus Brunnbauer , Gottfried Beer
- Applicant: Rainer Steiner , Jens Pohl , Werner Robl , Markus Brunnbauer , Gottfried Beer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/498
- IPC: H01L23/498
Abstract:
A semiconductor device includes a chip comprising a contact element, a structured dielectric layer over the chip, and a conductive element coupled to the contact element. The conductive element comprises a first portion embedded in the structured dielectric layer, a second portion at least partially spaced apart from the first portion and embedded in the structured dielectric layer, and a third portion contacting a top of the structured dielectric layer and extending at least vertically over the first portion and the second portion.
Public/Granted literature
- US20100207272A1 SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE ELEMENT Public/Granted day:2010-08-19
Information query
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