Invention Grant
- Patent Title: Memory block reallocation in a flash memory device
- Patent Title (中): 闪存设备中的内存块重新分配
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Application No.: US12478877Application Date: 2009-06-05
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Publication No.: US08072816B2Publication Date: 2011-12-06
- Inventor: Jin-Man Han , Aaron Yip
- Applicant: Jin-Man Han , Aaron Yip
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A non-volatile memory device has the pages of a certain memory block reallocated to other blocks in order to increase decrease disturb and increase reliability. Each of the reallocation blocks that contain the reallocated pages from the desired memory block are coupled to a wordline driver. These wordline drivers have a subset of the global wordlines as inputs. The desired wordline driver is selected by an appropriate select signal from a block decoder and an indication on an appropriate global wordline. This causes the wordline driver to generate a local wordline to the desired block with the reallocated page to be accessed.
Public/Granted literature
- US20090244982A1 MEMORY BLOCK REALLOCATION IN A FLASH MEMORY DEVICE Public/Granted day:2009-10-01
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