Invention Grant
- Patent Title: Manufacturing method of wiring and storage element
- Patent Title (中): 接线和储存元件的制造方法
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Application No.: US12038453Application Date: 2008-02-27
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Publication No.: US08075945B2Publication Date: 2011-12-13
- Inventor: Kensuke Yoshizumi , Noriko Harima , Tomoko Yamada
- Applicant: Kensuke Yoshizumi , Noriko Harima , Tomoko Yamada
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-053712 20070305
- Main IPC: B05D3/06
- IPC: B05D3/06 ; B05D5/12

Abstract:
In a coating method, such as a droplet discharge method which requires baking, it is an object of the present invention to reduce the baking temperature at the time of forming a wiring and a conductive film. As a feature of the present invention, a composition, in which nanoparticles of a conductive material are dispersed in a solvent, is discharged using a droplet discharge method, and then dried to vaporize the solvent. Then, pretreatment using active oxygen is performed. After which, baking is then performed, whereby a wiring and a conductive film are formed. By performance of the pretreatment by active oxygen before the baking, a baking temperature at the time of forming the wiring and conductive film can be reduced.
Public/Granted literature
- US20080220155A1 Manufacturing Method of Wiring and Storage Element Public/Granted day:2008-09-11
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