发明授权
- 专利标题: Methods of forming an amorphous silicon thin film
- 专利标题(中): 形成非晶硅薄膜的方法
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申请号: US12433629申请日: 2009-04-30
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公开(公告)号: US08076242B2公开(公告)日: 2011-12-13
- 发明人: Jong Su Kim , Hyung Sang Park , Yong Min Yoo , Hak Yong Kwon , Tae Ho Yoon
- 申请人: Jong Su Kim , Hyung Sang Park , Yong Min Yoo , Hak Yong Kwon , Tae Ho Yoon
- 申请人地址: KR
- 专利权人: ASM Genitech Korea Ltd.
- 当前专利权人: ASM Genitech Korea Ltd.
- 当前专利权人地址: KR
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 优先权: KR10-2008-0042367 20080507
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.
公开/授权文献
- US20090278224A1 METHODS OF FORMING AN AMORPHOUS SILICON THIN FILM 公开/授权日:2009-11-12
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