公开(公告)号：US20090278224A1

公开(公告)日：2009-11-12

申请号：US12433629

申请日：2009-04-30

申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

IPC分类号： H01L29/06 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

公开(公告)号：US08076242B2

公开(公告)日：2011-12-13

申请号：US12433629

申请日：2009-04-30

申请人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

发明人： Jong Su Kim ,  Hyung Sang Park ,  Yong Min Yoo ,  Hak Yong Kwon ,  Tae Ho Yoon

IPC分类号： H01L21/44

CPC分类号： H01L21/02592 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

摘要翻译： 公开了一种形成非晶硅薄膜的方法。 在一些实施例中，一种方法包括将基底装载到反应室中; 以及在所述衬底上进行多个沉积循环。 至少两个循环中的每一个包括：在第一时间段内将硅前体供应到反应室; 至少部分地在第一时间段内向反应室施加射频功率; 在第一时间段和紧随其后的沉积循环之间的第二时间段期间，停止供应硅前体和施加射频功率; 以及在第二时间段和紧随其后的沉积循环之间的第三时间段期间向反应室供应氢等离子体。 该方法允许在相对低的沉积温度下形成具有优异的阶梯覆盖和低粗糙度的非晶硅膜。

公开(公告)号：US08747948B2

公开(公告)日：2014-06-10

申请号：US13346470

申请日：2012-01-09

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/00

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US08092606B2

公开(公告)日：2012-01-10

申请号：US12334135

申请日：2008-12-12

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体导管，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US20120114856A1

公开(公告)日：2012-05-10

申请号：US13346470

申请日：2012-01-09

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： C23C16/04 ,  C23C16/458

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US20090047426A1

公开(公告)日：2009-02-19

申请号：US12176270

申请日：2008-07-18

申请人： Hyung Sang PARK ,  Jong Su Kim

发明人： Hyung Sang PARK ,  Jong Su Kim

IPC分类号： C23C16/00

CPC分类号： C23C16/45512 ,  C23C16/45508 ,  C23C16/45544 ,  C23C16/45582

摘要： A deposition apparatus for depositing a thin film on a substrate according to an embodiment of the present invention includes a substrate support, a reaction chamber wall formed above the substrate support and defining a reaction chamber, a gas inflow tube having a plurality of gas inlets connected to respective process gas sources and communicating with the reaction chamber, a volume adjusting horn for supplying a process gas to the reaction chamber, which defines a reaction space together with the substrate support, a micro-feeding tube assembly disposed between the gas inflow tube and the volume adjusting horn and having a plurality of fine tubules, and a helical flow inducing plate disposed between the micro-feeding tube assembly and the volume adjusting horn, and the process gas passing through the volume adjusting horn is directly supplied to the substrate without passing any other device. The process gases may be supplied to the substrate quickly and uniformly without any downstream gas dispersion device, such as a showerhead.

摘要翻译： 根据本发明实施例的用于在基板上沉积薄膜的沉积装置包括：基板支撑件，形成在基板支撑件上方并限定反应室的反应室壁;连接有多个气体入口的气体流入管 相应的处理气体源和与反应室连通的容积调节喇叭，用于向处理气体提供处理气体，该反应室与基板支撑件一起限定反应空间;微型进料管组件，设置在气体流入管和 容积调节喇叭并具有多个细小管，以及设置在微型进料管组件和体积调节喇叭之间的螺旋形流动板，并且通过体积调节喇叭的处理气体直接供给到基板而不经过 任何其他设备。 工艺气体可以快速均匀地供应到基底，而不需要任何下游气体分散装置，例如喷头。

公开(公告)号：US08273408B2

公开(公告)日：2012-09-25

申请号：US12250827

申请日：2008-10-14

申请人： Jong Su Kim ,  Hyung Sang Park

发明人： Jong Su Kim ,  Hyung Sang Park

IPC分类号： C23C28/00

CPC分类号： C23C16/40 ,  C23C16/45527 ,  H01L21/28562 ,  H01L28/65

摘要： Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

摘要翻译： 提供了在基片上沉积钌层的周期性方法。 在一个过程中，初始或孵育循环包括交替地和/或同时提供钌前体和氧源气体以在氧化钌上沉积氧化钌。 沉积在基板上的氧化钌还原成钌，从而形成钌层。 氧源气体可以是氧气（O 2）。 可以通过供给诸如氨（NH 3）气体的还原剂来还原氧化钌。 该方法提供了具有对下面的高介电层的良好粘附性的钌层，同时在衬底上的结构上提供了良好的阶梯覆盖。 成核后，可以改变随后的沉积循环以优化速度和/或保形性而不是粘附。

公开(公告)号：US20090156015A1

公开(公告)日：2009-06-18

申请号：US12334135

申请日：2008-12-12

申请人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

发明人： Hyung Sang Park ,  Seung Woo Choi ,  Jong Su Kim ,  Dong Rak Jung ,  Jeong Ho Lee ,  Chun Soo Lee

IPC分类号： H01L21/30 ,  C23C16/54

CPC分类号： C23C16/40 ,  C23C16/4408 ,  C23C16/45519

摘要： A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

摘要翻译： 构造成在基板上形成薄膜的沉积装置包括：反应器壁; 位于反应器壁下方的衬底支撑件; 以及位于基板支撑件上方的喷头板。 喷头板与基板支撑件一起限定反应空间。 该装置还包括一个或多个气体管道，其构造成至少在通过其供应惰性气体时向反应空间的周边开放。 一个或多个气体导管构造成向反应空间周围的衬底支撑件的周围向内供应惰性气体。 这种构造防止了在沉积工艺期间反应气体在衬底和衬底支撑件之间流动，从而防止不期望的薄膜和杂质颗粒沉积在衬底的背面上。

公开(公告)号：US20090104777A1

公开(公告)日：2009-04-23

申请号：US12250827

申请日：2008-10-14

申请人： Jong Su Kim ,  Hyung Sang Park

发明人： Jong Su Kim ,  Hyung Sang Park

IPC分类号： H01L21/44

CPC分类号： C23C16/40 ,  C23C16/45527 ,  H01L21/28562 ,  H01L28/65

摘要： Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

摘要翻译： 提供了在基片上沉积钌层的周期性方法。 在一个过程中，初始或孵育循环包括交替地和/或同时提供钌前体和氧源气体以在氧化钌上沉积氧化钌。 沉积在基板上的氧化钌还原成钌，从而形成钌层。 氧源气体可以是氧气（O 2）。 可以通过供给诸如氨（NH 3）气体的还原剂来还原氧化钌。 该方法提供了具有对下面的高介电层的良好粘附性的钌层，同时在衬底上的结构上提供了良好的阶梯覆盖。 成核后，可以改变随后的沉积循环以优化速度和/或保形性而不是粘附。

公开(公告)号：US08797093B2

公开(公告)日：2014-08-05

申请号：US13244169

申请日：2011-09-23

申请人： Jong Su Kim

发明人： Jong Su Kim

IPC分类号： G05F1/10 ,  H01L27/02

CPC分类号： H03K5/08 ,  H01L27/0266

摘要： A semiconductor integrated circuit includes a first voltage supply unit, a second voltage supply unit configured to supply a voltage with a level different from that of the first voltage supply unit, and a voltage stabilizing unit connected between the first and second voltage supply units, and including at least one discharge path that includes a clamping section configured to temporarily drop a level of a voltage introduced from the first or second voltage supply unit, and a discharge section configured to discharge the voltage having passed through the clamping section to the second or first voltage supply unit.

摘要翻译： 半导体集成电路包括第一电压供给单元，被配置为提供与第一电压供应单元的电平不同的电压的第二电压供应单元，以及连接在第一和第二电压供应单元之间的稳压单元，以及 包括至少一个放电路径，其包括被配置为暂时降低从第一或第二电压供应单元引入的电压的电平的钳位部分，以及被配置为将已经穿过夹持部分的电压放电到第二或第一 电压供应单元。