Invention Grant
US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
通过控制相对电极之间的RF相位,晶片上的等离子体工艺均匀性

Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes
Abstract:
A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
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