发明授权
- 专利标题: Semiconductor memory asynchronous pipeline
- 专利标题(中): 半导体存储器异步管道
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申请号: US12773531申请日: 2010-05-04
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公开(公告)号: US08078821B2公开(公告)日: 2011-12-13
- 发明人: Ian Mes
- 申请人: Ian Mes
- 申请人地址: CA Ottawa, Ontario
- 专利权人: Mosaid Technologies Incorporated
- 当前专利权人: Mosaid Technologies Incorporated
- 当前专利权人地址: CA Ottawa, Ontario
- 代理机构: Hamilton, Brook, Smith & Reynolds, P.C.
- 优先权: CA2233789 19980401
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F1/12 ; G06F1/00 ; G11C8/00 ; G11C8/16 ; G11C8/18 ; G11C7/00
摘要:
An asynchronously pipelined SDRAM has separate pipeline stages that are controlled by asynchronous signals. Rather than using a clock signal to synchronize data at each stage, an asynchronous signal is used to latch data at every stage. The asynchronous control signals are generated within the chip and are optimized to the different latency stages. Longer latency stages require larger delays elements, while shorter latency states require shorter delay elements. The data is synchronized to the clock at the end of the read data path before being read out of the chip. Because the data has been latched at each pipeline stage, it suffers from less skew than would be seen in a conventional wave pipeline architecture. Furthermore, since the stages are independent of the system clock, the read data path can be run at any CAS latency as long as the re-synchronizing output is built to support it.
公开/授权文献
- US20100217928A1 Semiconductor Memory Asynchronous Pipeline 公开/授权日:2010-08-26
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