发明授权
US08080479B2 Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator
失效
通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性
- 专利标题： Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator
- 专利标题（中）： 通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性
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申请号： US11733858申请日： 2007-04-11
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公开(公告)号： US08080479B2公开(公告)日： 2011-12-20
- 发明人: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.