Invention Grant
US08083892B2 Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
有权
用于产生气体等离子体的装置，用于产生等离子体的气体组成和使用该等离子体的半导体装置的制造方法
- Patent Title: Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
- Patent Title (中): 用于产生气体等离子体的装置，用于产生等离子体的气体组成和使用该等离子体的半导体装置的制造方法
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Application No.: US12382328Application Date: 2009-03-13
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Publication No.: US08083892B2Publication Date: 2011-12-27
- Inventor: Young-Min Min , Dae-Kyu Choi , Do-In Bae , Yun-Sik Yang , Wan-Goo Hwang , Jin-Man Kim
- Applicant: Young-Min Min , Dae-Kyu Choi , Do-In Bae , Yun-Sik Yang , Wan-Goo Hwang , Jin-Man Kim
- Applicant Address: KR Gyeonggi-do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,New Power Plasma Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,New Power Plasma Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2002-69776 20021111
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306
Abstract:
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
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