发明授权
- 专利标题: Methods for characterizing device variation in electronic memory circuits
- 专利标题(中): 表征电子存储器电路中器件变化的方法
-
申请号: US12542187申请日: 2009-08-17
-
公开(公告)号: US08086917B2公开(公告)日: 2011-12-27
- 发明人: Ching-Te K. Chuang , Jae-Joon Kim , Saibal Mukhopadhyay
- 申请人: Ching-Te K. Chuang , Jae-Joon Kim , Saibal Mukhopadhyay
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C7/00
摘要:
A circuit includes a comparator circuit configured such that its output toggles from a first digital logical level to a second digital logical level when its first and second inputs transition between a first state wherein the first input has an applied voltage greater than an applied voltage at the second input and a second state wherein the first input has an applied voltage less than an applied voltage at the second input. A plurality of cells each have at least one series-connected pair of field effect transistors interconnected at an output node intermediate the field effect transistors. Decoding logic is configured to select a given one of the cells for measurement, and selectively interconnect the output node of the given one of the cells to the first input of the comparator circuit. Voltage supply circuitry is configured to (i) apply voltages to the gates of the pair of transistors of the given one of the cells selected for measurement, such that the pair of transistors operate in a linear region, and have a variable voltage difference, Δ, between their gate-to-source voltages, and (ii) vary the Δ until the comparator circuit output toggles from the first digital logical level to the second digital logical level.
公开/授权文献
信息查询