发明授权
US08088503B2 Chemical solution deposition method of fabricating highly aligned MgO templates
有权
制备高度排列的MgO模板的化学溶液沉积方法
- 专利标题: Chemical solution deposition method of fabricating highly aligned MgO templates
- 专利标题(中): 制备高度排列的MgO模板的化学溶液沉积方法
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申请号: US12363035申请日: 2009-01-30
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公开(公告)号: US08088503B2公开(公告)日: 2012-01-03
- 发明人: Mariappan Parans Paranthaman , Srivatsan Sathyamurthy , Tolga Aytug , Paul N Arendt , Liliana Stan , Stephen R Foltyn
- 申请人: Mariappan Parans Paranthaman , Srivatsan Sathyamurthy , Tolga Aytug , Paul N Arendt , Liliana Stan , Stephen R Foltyn
- 申请人地址: US TN Oak Ridge US CA Oakland
- 专利权人: UT-Battelle, LLC,The Regents of the University of California
- 当前专利权人: UT-Battelle, LLC,The Regents of the University of California
- 当前专利权人地址: US TN Oak Ridge US CA Oakland
- 代理商 Joseph A. Marasco
- 主分类号: H01B12/00
- IPC分类号: H01B12/00 ; B05D5/12 ; H01L39/24
摘要:
A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
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