发明授权
- 专利标题： Positive resist composition and pattern forming method
- 专利标题（中）： 正抗蚀剂组成和图案形成方法
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申请号： US12181757申请日： 2008-07-29
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公开(公告)号： US08088550B2公开(公告)日： 2012-01-03
- 发明人: Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
- 申请人： Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
- 申请人地址： JP Tokyo
- 专利权人： Fujifilm Corporation
- 当前专利权人： Fujifilm Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2007-198055 20070730
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/30
摘要：
A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).
公开/授权文献
- US20090035692A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD 公开/授权日：2009-02-05
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